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| (R) STPS80L60CY POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s 2 x 40 A 60 V 150 C 0.56 V A2 K s s s s s VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 K A1 DESCRIPTION Dual center tap Schottky rectifier suited for CAD computers and servers. Packaged in Max247, STPS80L60CY is intended for use in low voltage, high frequency switching power supplies, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 130C = 0.5 Per diode Per device Value 60 56 40 80 400 2 20000 - 55 to + 150 150 10000 Unit V A A A A W C C V/s Max247 tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 1s Tj = 25C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/4 July 2003 - Ed: 4A STPS80L60CY THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Value 0.70 0.50 0.3 Unit C/W Min. Typ. 0.4 Max. 1.8 0.9 0.57 0.56 0.78 0.77 Unit mA A V VR = VRRM IF = 40 A 0.50 IF = 80 A 0.69 To evaluate the maximum conduction losses use the following equation : P = 0.36 x IF(AV) + 0.005 x IF2(RMS) Fig. 1: Conduction losses versus average current. P(W) 35 = 0.5 Fig. 2: Average forward current versus ambient temperature ( = 0.5). IF(av)(A) 45 Rth(j-a)=Rth(j-c) 30 25 = 0.05 = 0.1 40 = 0.2 =1 35 30 25 Rth(j-a)=5C/W 20 15 10 5 20 15 T 10 tp IF(av)(A) 0 0 10 20 30 =tp/T 40 5 0 50 Tamb(C) 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/4 STPS80L60CY Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 500 450 400 350 300 250 200 150 Tc=125C Tc=25C Tc=75C Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 = 0.2 = 0.1 = 0.5 100 50 0 IM t 0.2 Single pulse T =0.5 t(s) 1.E-02 1.E-01 1.E+00 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 1.E-03 1.E+00 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1.E+03 Tj=125C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100.0 F=1MHz Vosc=30mV Tj=25C 1.E+02 Tj=100C 1.E+01 Tj=75C 10.0 Tj=50C 1.E+00 Tj=25C 1.0 1.E-01 VR(V) 1.E-02 0 5 10 15 20 25 30 35 40 45 50 55 60 VR(V) 0.1 1 10 100 Fig. 9: Forward voltage drop versus forward current. IFM(A) 1000 100 Tj=125C (Maximum values) Tj=125C (Typical values) 10 Tj=25C (Maximum values) VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS80L60CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E A Millimeters Min. Max. 5.30 2.60 1.40 2.40 3.40 0.80 10.30 5.55 15.90 15.20 4.30 Inches Min. 0.185 0.087 0.038 0.079 0.118 0.016 0.776 0.211 0.602 0.559 0.146 Max. 0.209 0.102 0.055 0.094 0.133 0.031 0.799 0.219 0.626 0.598 0.169 A A1 b b1 D 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 b2 c D L1 A1 L b1 b2 e b c e E L L1 Ordering type Marking Package Max247 Weight 4.4g Base qty 30 Delivery mode Tube STPS80L60CY STPS80L60CY s EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 4/4 |
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